Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters
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概要
- 論文の詳細を見る
A new technique called deep-lebel Fourier spectroscopy (DLFS), is proposed. This is an efficient and convenient method for evaluating deep livels in semiconductors. The technique is presented with a frequency space analysis for the case of exponential capacitance transients. Taking the Fourier transforms of the transient capacitance values, the deep level emission rate is determined in sequence from various numerical calculations of the Fourier coefficients. This method makes it possible to analyze the deep level accurately and automatically without judgements of the peaks in the spectra. Computer simulation and experiments using the method for a p-type Si Schottky diode are demonstrated. Finally, a comparison is made with the DLTS method.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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IKEDA Kousuke
Musashino Electrical Communication Laboratory, NTT
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TAKAOKA Hidetoshi
Musashino Electrical Communication Laboratory, NTT
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Ikeda Kousuke
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ikeda Kousuke
Musashino Electrical Communication Laboratory Ntt
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Takaoka Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takaoka Hidetoshi
Musashino Electrical Communication Laboratory Ntt
関連論文
- Photo-Deep-Level Fourier Spectroscopy in Semi-Insulating Bulk Materials
- Electrical Characterization of Micro Defects in Silicon Crystal : C-3: CRYSTAL TECHNOLOGY
- Stacking Faults from Oxide Precipitates in CZ Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- Growth of Stacking Faults by Bardeen-Herring Mechanism in Czochralski Silicon
- Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters
- Single Thermal Scan DLTS Method