Effects of Crossed Magnetic Fields on Silicon Particles in Plasma Chemical Vapor Deposition Process
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概要
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In order to realize the preparation of large-area uniform hydrogenated amorphous silicon thin films for solar cells under-dust particle-free process conditions, the scanning plasma method (SPM) using a crossed magnetic field has been investigated to remove silicon particles produced in silane discharge. The silicon particles collected on the substrates were observed by scanning electron microscopy (SEM) to identify the crossed magnetic field effects on particle removal and suppression in the present SPM process. In this paper, the relationship between the externally applied crossed magnetic field and the particle behavior in silane plasma are reviewed from the viewpoint of particle removal and suppression.
- 社団法人応用物理学会の論文
- 1999-07-30
著者
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Maemura Y
Department Of Electrical Engineering Nagasaki University
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Maemura Yoko
Department Of Info-media Siebold University Of Nagasaki
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FUJIYAMA Hiroshi
Department of Energy Conversion, Graduate School of Engineering Sciences, Kyushu University
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Ohtsu Mikio
Department of Electrical Engineering, Nagasaki University
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Fujiyama Hiroshi
Department Of Electrical Engineering Nagasaki University
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Fujiyama Hiroshi
Department Of Electrical And Electronic Engineering Nagasaki University
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Ohtsu Mikio
Department Of Electrical Engineering Nagasaki University
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Maemura Yoko
Department of Electrical Engineering, Nagasaki University
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