Kinetic Crystallization Behavior of Phase-Change Medium

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概要

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• The crystallization behavior of nominal-composition GeSb_2Te_4 films prepared by rf-magnetron sputtering are examined. The crystal structures of the as-sputtered and the annealed films at different annealing temperatures are identified by the X-ray diffraction (XRD) method. Two phase transformations occur in the conventional slow heating process when the as-sputtered film is heat-treated from the ambient temperature to its melting point. However, only the amorphous to face-centered cubic (FCC) transformation is allowed when laser annealing with a 10^<11>℃/min heating rate is applied to heat the films. Consequently, we predict that the meta stable FCC phase, instead of the hexagonal closed-packed (HCP) phase, is the dominant crystalline phase in the GeSb_2Te_4 phase-change recording medium.

• 社団法人応用物理学会の論文
• 1999-03-30

著者

• Huang Der-ray

  Opto-electronics & Systems Laboratories Industrial Technology Research Institute

• Huang Der-ray

  Opto-electronics & Systems Lab. Itri

• Liu Chung-ping

  Electrical Engineering Department Yuan-ze University

• Jeng Tzuan-reng

  Opto-electronics & Systems Laboratories Industrial Technology Research Institute

• Chang Y‐y

  Department Of Materials Science And Engineering National Tsing Hua University

• CHIANG DonYau

  Opto-Electronics & Systems Lab.

• Chiang Donyau

  Opto-electronics & Systems Laboratories Industrial Technology Research Institute

• CHANG Yung-Yuan

  Electrical Engineering Department, Yuan-Ze University

• Chang Yung-yuan

  Electrical Engineering Department Yuan-ze University

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