Electron-Electron Interaction Effects in Sb-Te-Ag Phase-Change Media
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概要
- 論文の詳細を見る
We have measured the electrical resistivity of (Sb_2Te_3)_<1-x>Ag_x phase-change media (0.13≤x≤0.21) between 2 and 15 K, in order to investigate the occurrence of temperature and disorder dependent correction, Δρ(T, ρ_r), to the residual resistivity in a disordered system. As the temperature T is lowered to the liquid helium temperature, a resistivity rise Δρ/√<T> 〜-ρ_r^<2.5> is observed. This functional form is due to the enhanced electron-electron interaction effects in a disordered metal. Our experimental results completely support the theoretical predictions, i.e. Δρ(T)〜-√<T>ρ_r^<2.5>.
- 社団法人応用物理学会の論文
- 1999-03-30
著者
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Huang Der-ray
Opto-electronics System Laboratories
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Huang Der-ray
Opto-electronics & Systems Lab. Itri
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Wu C
Opto-electronics System Laboratories
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Song Yu
Institute Of Physics Academic Sinica
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Yao Yeong
Institute Of Physics Academic Sinica
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Yao Yeong
Institute Of Physics Academia Sinica
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WU Chih
Opto-Electronics System Laboratories
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