Study of Crystallization Kinetics in GeSbTeSeM (M=Cu, Co, Ni, Pb) Phase Change Materials

概要

論文の詳細を見る
We obtained the experimental exothermal curves of chalcogenide alloys Ge_40Sb_10Te_45Se_3.5M_1.5, M=Co, Cu, Ni, Pb, and applied the kissinger's formula to extract the activation energy Ec.Our results indicate that the activation energy E_c increases while doping a small amount of M metals.At isothermal electrical resistivity measurement, the resistivity of the sputtered doped films decreases with time.Also the esistivitry decrease rate (dR/dt) increases with the increase of isothermal temperature.This phenomenon is due to phase transition between amorphous and crystalline states.The crystallization process in our study is interpreted successfully by Johnson-Mehl-Avrami (JMA) transformation equation, and the crystallization time τ is extracted from the JMA equation when we compared the experimental results to the equation.We find that the crystallization time for Ge_40Sb_10Te_45Se_5 alloy with doping M is shorter significantly than that for Ge_40Sb_10Te_45Se_5 alloy without doping, and it is lower than 50 ns at 730 K and near 100 ns, respectively.These results indicate that the M dope enhances crystallization process.
社団法人日本磁気学会の論文
2001-03-15