A Comparative Study on the Electrical Properties of Amorphous Silicon Thin Films in Light-Induced Crystallization
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概要
- 論文の詳細を見る
Amorphous silicon films, prepared by glow discharge, LPCVD and electron beam evaporation, were crystallized by incoherent light from an are discharge. These samples had a wide range of dark conductivities at room temperature varying from 10^<^11> to 10^<^6> (Ω・cm)^<-1> before crystallization, but after crystallization the values converge to 10^<-5>-10^<-4> (Ω・cm)^<-1>. It is suggested that grain boundaries resulted in an amorphous-like density-of-state distribution, with a maximum at about 0.30±0.05 eV below the conduction band. It is demonstrated that for doped films crystallization effectively activates the dopants.
- 社団法人応用物理学会の論文
- 1984-10-20
著者
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Wong S.
Department Of Chemistry The University Of Western Ontario
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Ebihara K
Graduate School Of Science And Technology Department Of Electrical And Computer Engineering Kumamoto
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Ebihara Kenji
Department Of Electrical And Computer Engineering Faculty Of Engineering Kumamoto University
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CHEN Z.
Department of Physics, The University of Western Ontario
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JOHN P.
Department of Physics, The University of Western Ontario
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TONG B.
Department of Physics, The University of Western Ontario
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Ebihara Kenji
Department Of Cardiology Kumamoto Saisyunsou Hospital
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Tong B.
Department Of Physics The University Of Western Ontario
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John P.
Department of Nuclear Engineering, University of California, Berkeley, CA 94720-1730, U.S.A.
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