Crystallographic Structures and Perpendicular Magnetization of GdFe Films Sputtered with Substrate Bias Voltage
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概要
- 論文の詳細を見る
Crystallographic structures of sputtered Fe and GdFe films both with and without substrate bias voltage were investigated using an X-ray diffractometer. Films sputtered from lower Gd composition target show the crystalline phase. It was found that (110) orientation of bcc Fe in the films was improved by the small amount of incorporated Gd atoms with the existence of substrate bias voltage. Films possessing magnetization aligned perpendicular to the film plane were obtained with the application of -200 V and -300 V bias voltage to the substrate.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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OHKOSHI Masatoshi
Department of Applied Physics, School of Science and Engineering, Waseda University
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Nawate Masahiko
Department Of Electronics Faculty Of Engineering Hiroshima University
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HONDA Shigeo
Department of Nuclear Engineering, Graduate School of Engineering, Osaka University
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Honda Shigeo
Department Of Applied Phsics Osaka City University:(present Address) Department Of Electronics Hiros
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KUSUDA Tetsuzo
Department of Electronics, Faculty of Engineering, Hiroshima University
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Kusuda Tetsuzo
Department Of Electronics Faculty Of Engineering Hiroshima University
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Ohkoshi Masatoshi
Department Of Applied Physics School Of Science And Engineering Waseda University
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OHKOSHI Masatoshi
Department of Electronics, Faculty of Engineering, Hiroshima University
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