Enhanced Growth of β-C_3N_4 Crystallites at a High Substrate Temperature

概要

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The growth of β-C_3N_4 crystallites is studied at various substrate temperatures by an inductively-coupled plasma sputtering method using 500 W of radio frequency power to enhance the gas dissociation. The crystallites deposited are demonstrated to be β-C_3N_4 phase rather than other phases from the transmission electron diffraction and the X-ray photoelectron spectroscopy results. Upon increasing the substrate temperature from 400℃ to 800℃, β-C_3N_4 crystallite size increases from 0.02μm to 0.2μm, but the [N]/[C] atomic ratio in the film decreases slightly from 1.0 to 0.85, suggesting that the film contains larger β-C_3N_4 crystallites in a less nitrogenated amorphous carbon matrix at a higher temperature. The film deposited at 800℃ exhibits a highly spotty transmission electron diffraction pattern and contains a high percentage (90%) of sp^3 C-N bonding as estimated from X-ray photoelectron spectroscopy. The results suggest that a high substrate temperature enhances the formation of β-C_3N_4 crystallites at a high degree of gas dissociation.
社団法人応用物理学会の論文
1998-09-15