Diamond Growth by Dual Hollow Cathode Arc Chemical Vapor Deposition
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概要
- 論文の詳細を見る
A new design for a dual hollow cathode arc chemical vapor deposition system is used to grow diamond films. The inner hollow cathode is the primary thermionic emission source. The outer hollow cathode magnified the discharge current. Contrary to the single hollow cathode chemical vapor deposition, the dual hollow cathode chemical vapor deposition can deposit diamond films free of cathode contaminants, and therefore, enhance the film quality. With the aid of electron bombardment of the substrate, the dual cathode design can grow diamond films of good crystalline quality, and with a high growth rate, 2.3μ/h, even at a high CH_4 concentration such as 10% and at a low pressure of 15 Torr.
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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HONG Franklin
Department of Chemical Engineering National Cheng Kung University
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Hong Franklin
Department Of Chemical Engineering National Cheng-kung University
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LIANG Gou-Tsau
Department of Chemical Engineering, National Cheng-Kung University
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Liang Gou-tsau
Department Of Chemical Engineering National Cheng-kung University
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Hong Franklin
Department of chemical engineering and Micro/Nano Science and Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 701, Republic of China
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