Deposition of Micro-Crystalline β-C_3N_4 Films by an Inductively-Coupled-Plasma (ICP) Sputtering Method

概要

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The sputtering of a graphite target with N_2 ions in an inductively-coupled plasma was employed to deposit C_3N_4 films in hydrogen-free atmosphere with a high degree of gas dissociation. Transmission electron diffraction patterns of the films indicate the existence of ultrafine-crystallites, structurally analogous to β-C_3N_4. Scanning electron micrographs show that the crystallites are less than 40 nm in diameter. From X-ray photoelectron spectroscopy (XPS) analysis it is determined that the films exhibit predominantly C-N bonding (with respect to C〓N bonding) and no significant C-C bonding is observed. Besides, both the [N]/[C] ratio and the percentage of C-N bonds in the film, as determined from XPS, increase upon increasing the radio frequency power from 100 W to 600 W, with the [N]/[C] ratio attaining a value of 1.28 at 600 W. The measurement of the [N^+_2]/[N_2] ratio by optical emission spectroscopy indicates the enhancement of the gas dissociation with increasing radio frequency power. The results suggest that β-C_3N_4 crystallites are favorably formed upon increasing the degree of gas dissociation.
社団法人応用物理学会の論文
1998-06-01