Carrier-Lifetime-Limited Fast Photoconductive Photodetectors on Iron-Diffused GaAs

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概要

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• Deep acceptors of iron have been employed to overcompensate n-GaAs epitaxial layers and to reduce its carrier lifetime. The photodetectors exhibited current pulses with full widths at half-maxium (FWHMs) as short as 72 ps in spite of the large spacing of 15 μm between the electrodes. The dependence of response time and responsivity on the bias voltage shows that the carrier lifetime rather than the transit time limits the speed, and that collection efficiency of photogenerated electrons mainly limits the sensitivity. Absence of the usual long tail in the pulse responses might be due to a distinctive optical property of the iron level at E_V+0.52 eV.

• 社団法人応用物理学会の論文
• 1993-08-01

著者

• Ohsawa Jun

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Migitaka Masatoshi

  Department Of Information And Control Engineering Toyota Technological Institute

• HASHIMOTO Nobuhiko

  Department of Information and Control, Toyota Technological Institute

• Hashimoto N

  Univ. Electro‐communications Tokyo Jpn

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• Optical Signal Inverter Derived from Negative Nonlinear Absorption Effects
• Temperature Dependence and Numerical Analysis of Negative Nonlinear Absorption Effect in Erbium-Yttrium Aluminum Garnet
• All-Optical Switch Derived from the Negative Nonliear Absorption Effect in Erbium-Doped Fibers
• Carrier-Lifetime-Limited Fast Photoconductive Photodetectors on Iron-Diffused GaAs
• Optical Switch-Off Effect Using Excited State Absorption of Erbium-Doped Fibers
• Modulation Characteristics of the Negative Nonlinear Absorption Effect in Erbium-Yttrium Aluminum Garnet
• Bistable Optical Devices Using Laser Diodes Coupled to Interference Filters
• Observation of a Hole Trap in Liquid-Phase Epitaxial GaAs by Intentional Doping and Space-Charge-Limited Current Analysis^*

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