High-Mobility Thin-Film Transistor Fabricated Using Hydrogenated Amorphous Silicon Deposited by Discharge of Disilane
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概要
- 論文の詳細を見る
Plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) film was investigated with emphasis on the effect of disilane flow rate. A coplanar thin-film transistor (TFT) was fabricated using this a-Si:H film. Silicon-hydrogen bond content in the a-Si:H film was measured by infrared absorption spectroscopy. With decrease in the disilane flow rate from 3.0 cm^3/min to 1.5 cm^3/min, the maximum field-effect electron mobility (μ_<FE>) of the TFT which depends on the gate voltage increased from 3.3 cm^2/(V・s) to 4.9 cm^2/(V・s), accompanied by a reduction in the silicon-hydrogen bond content. There was a negative correlation between μ_<FE> and the silicon-hydrogen bond content in the a-Si:H film. The improvement mechanism of μ_<FE> was discussed in terms of the chemical structure of the a-Si:H film.
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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Nakamura Junji
Department Of Rehabilitation Medicine Nishi-yamato Rehabilitation Hospital
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Nakamura Junji
Department Of Information And Control Engineering Toyota Technological Institute
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MIGITAKA Masatoshi
Department of Information and Control, Toyota Technological Institute
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Migitaka Masatoshi
Department Of Information And Control Engineering Toyota Technological Institute
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YAMAMOTO Shigeichi
Department of Information and Control Engineering, Toyota Technological Institute
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Yamamoto Shigeichi
Department Of Information And Control Engineering Toyota Technological Institute
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