Total Pressure Effects on the Properties of Silicon Nitride Films Fabricated by Photoenhanced Chemical Vapor Deposition
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概要
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Silicon nitride (SiN_x) films were deposited on (100)Si substrates using silane and ammonia gases by the direct-photolysis photoenhanced chemical vapor deposition method at 280℃. The depositions were performed with emphasis on the total pressures, which ranged from 0.51 Torr to 4.04 Torr. As the total pressure increased, the film resistivity decreased from 3.7×10^<15> Ω・cm to 4.8×10^9 Ω・cm. The effective trapped carrier density at the SiN_x/(100)Si interface reached a minimum value (2.1×10^<10> cm^<-2>) at 1.52 Torr. The film included silicon bonded with silicon (Si-Si) components as well as nitrified silicon (Si-N) components. The Si-Si components increased and the Si-N components decreased in number as the total pressure increased. Based on these results and gas analysis findings, two important reactions to characterize the film properties were discussed.
- 社団法人応用物理学会の論文
- 1994-09-15
著者
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Migitaka Masatoshi
Department Of Information And Control Engineering Toyota Technological Institute
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YAMAMOTO Shigeichi
Department of Information and Control Engineering, Toyota Technological Institute
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Yamamoto Shigeichi
Department Of Information And Control Engineering Toyota Technological Institute
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