Observation of a Hole Trap in Liquid-Phase Epitaxial GaAs by Intentional Doping and Space-Charge-Limited Current Analysis^*
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概要
- 論文の詳細を見る
The hole trap at E_1-E_v=0.4 eV, typical of liquid phase epitaxial materials, has been detected by combining intentional doping of iron with the analysis of space-charge-limited current (SCLC) in the resulting high-resitivity GaAs. Diffusion of iron from a liquid spin-on source is employed to render undoped n^--type liquid phase epitaxy (LPE) layers π-type, shifting its Fermi energy just above the E_1. The depth and density of the trap agree well with the reported values of a deep level transient spectroscopy (DLTS) measurement. Temperature dependence of the trap depth has also been obtained.
- 社団法人応用物理学会の論文
- 1991-05-15
著者
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Ohsawa Jun
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Migitaka Masatoshi
Department Of Information And Control Engineering Toyota Technological Institute
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Lee Phan-Zong
Department of Electrical and Computer Engineering, University of California
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Ohsawa Jun
Department of Information and Control, Toyota Technological Institute
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Wieder Harry
Department of Electrical and Computer Engineering, University of California
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- Observation of a Hole Trap in Liquid-Phase Epitaxial GaAs by Intentional Doping and Space-Charge-Limited Current Analysis^*