Hybrid-Excitation Chemical Vapor Deposition of Silicon Nitride on (100)Si : The Film and Interface Properties
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-02-15
著者
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MIGITAKA Masatoshi
Department of Information and Control, Toyota Technological Institute
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Migitaka Masatoshi
Department Of Information And Control Engineering Toyota Technological Institute
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YAMAMOTO Shigeichi
Department of Information and Control Engineering, Toyota Technological Institute
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Yamamoto Shigeichi
Department Of Information And Control Engineering Toyota Technological Institute
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Yamamoto Shigeichi
Department Of Information And Control Engineering Toyota Technological Institute:research Laboratory
関連論文
- Iron Concentrations in GaAs Diffused from a Spin-on Film
- Negative Nonlinear Absorption Effect in Erbium Doped Fibers
- Hybrid-Excitation Chemical Vapor Deposition of Silicon Nitride on (100)Si : The Film and Interface Properties
- Silicon Nitride Film for High-Mobility Thin-Film Transistor by Hybrid-Excitation Chemical Vapor Deposition
- High-Mobility Thin-Film Transistor Fabricated Using Hydrogenated Amorphous Silicon Deposited by Discharge of Disilane
- Total Pressure Effects on the Properties of Silicon Nitride Films Fabricated by Photoenhanced Chemical Vapor Deposition
- Optical Signal Inverter Derived from Negative Nonlinear Absorption Effects
- Temperature Dependence and Numerical Analysis of Negative Nonlinear Absorption Effect in Erbium-Yttrium Aluminum Garnet
- All-Optical Switch Derived from the Negative Nonliear Absorption Effect in Erbium-Doped Fibers
- Carrier-Lifetime-Limited Fast Photoconductive Photodetectors on Iron-Diffused GaAs
- Optical Switch-Off Effect Using Excited State Absorption of Erbium-Doped Fibers
- Modulation Characteristics of the Negative Nonlinear Absorption Effect in Erbium-Yttrium Aluminum Garnet
- Bistable Optical Devices Using Laser Diodes Coupled to Interference Filters
- Observation of a Hole Trap in Liquid-Phase Epitaxial GaAs by Intentional Doping and Space-Charge-Limited Current Analysis^*