Relationship between Barrier Thickness and Crystal Quality in InGaAs/InGaAsP Strained Multi-Quantum Well Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-03-15
著者
-
Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
-
Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
-
AIZAWA Takuya
Optics and Electronics Laboratory, FUJIKURA Lid.
-
Aizawa T
Fujikura Ltd. Chiba Jpn
-
Aizawa T
Optics And Electronics Laboratory Fujikura Lid.
-
SUZAKI Shinzo
Advanced Technology R & D Center, Fujikura Ltd.
-
RAVIKUMAR Katare
Advanced Technology R & D Center, Fujikura Ltd.
-
SEKIGUCHI Toshisada
Advanced Technology R & D Center, Fujikura Ltd.
-
AIZAWA Takuya
Advanced Technology R & D Center, Fujikura Ltd.
-
YAMAUCHI Ryozo
Advanced Technology R & D Center, Fujikura Ltd.
-
Yamauchi R
Fujikura Ltd. Sakura‐shi Jpn
-
Suzaki Shinzo
Advanced Technology R & D Center Fujikura Ltd.
-
Sekiguchi T
Central Research Laboratory Hitachi Ltd.
-
Sekiguchi Tomonori
The Advanced Tech. R&d Center Fujikura Ltd.
関連論文
- Active Gain-Slope Compensation of EDFA Using Thulium-Doped Fiber as Saturable Absorber (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Active Gain-Slope Compensation of EDFA Using Thulium-Doped Fiber as Saturable Absorber (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Light Emission from Quantum-Box Structure by Current Injection
- A High-Endurance Read/Write Scheme for Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Bending Loss Characteristics of MQW Optical Waveguides (Special Issue on Optical Interconnection)
- Relationship between Barrier Thickness and Crystal Quality in InGaAs/InGaAsP Strained Multi-Quantum Well Structure
- Low-Switching-Voltage Operation in Compact InGaAsP/InP Multi-Quantum-Well Directional Coupler with Optimized Layer Structure
- An Independent-Source Overdriven Sense Amplifier for Multi-Gigabit DRAM Array
- 12 GHz Low-Noise MMIC Amplifier with GaAs Pulse-Doped MESFET's
- Suppression of Stimulated Brillouin Scattering by Intentionally Induced Periodical Residual-Strain in Single-Mode Optical Fibers (Special Issue on Optical Fiber Cables and Related Technologies)
- Calculation of the Potential Distribution around an Impurity-Atom-Wire-The Validity of the Thomas-Fermi Approximation