Low-Switching-Voltage Operation in Compact InGaAsP/InP Multi-Quantum-Well Directional Coupler with Optimized Layer Structure
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概要
- 論文の詳細を見る
Low switching voltage of 4 V and the compact-coupling length of 0.73 mm are achieved simultaneously in a directional coupler switch with an InGaAsP/InP multi-quantum-well waveguide. The layer structure is optimized to obtain low-switching voltage. The crosstalk of the switch is below -12 dB for both cross and bar states.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Ravikumar K.g.
Optical Device Section Advanced R & D Center Fujikura Ltd.
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AIZAWA Takuya
Optics and Electronics Laboratory, FUJIKURA Lid.
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Aizawa Takuya
Optical Device Section Advanced R & D Center Fujikura Ltd.
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Nagasawa Yutaka
Optical Device Section, Advanced R & D Center, Fujikura Ltd.
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Kawanabe Kensuke
Optical Device Section, Advanced R & D Center, Fujikura Ltd.
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Suzaki Shinzo
Optical Device Section, Advanced R & D Center, Fujikura Ltd.
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Suzaki S
Optical Device Section Advanced R & D Center Fujikura Ltd.
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Nagasawa Yutaka
Optical Device Section Advanced R & D Center Fujikura Ltd.
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Kawanabe Kensuke
Optical Device Section Advanced R & D Center Fujikura Ltd.
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- Low-Switching-Voltage Operation in Compact InGaAsP/InP Multi-Quantum-Well Directional Coupler with Optimized Layer Structure