Growth and Characterization of the Isotopically Enriched ^<28>Si Bulk Single Crystal
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概要
- 論文の詳細を見る
We report on the successful growth of an isotopically enriched ^<28>Si bulk single crystal of the size∼4mm in diameter and ∼50mm in length. The isotopic enrichement of ^<28>Si(99.924at%), ^<28>Si(0.073at%),and ^<30>Si(0.003at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration ∼5×10^<17>cm^<-3>. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.
- 社団法人応用物理学会の論文
- 1999-12-15
著者
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Itoh Kohei
Faculty Of Science And Technology Keio University
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Oka Kunihiko
Electotechnical Laboratory
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Saito Naoaki
Electrotechnical Laboratory
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Takyu Ken-ichiro
Faculty of Science and Technology, Keio University
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OZHOGIN Valerii
Russian Research Center, Kurchatov Institute
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