A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
スポンサーリンク
概要
- 論文の詳細を見る
A simple model of diffusion involving the internal electric field and the presence of neutral effects was developed. The interstitial-substitutional mechanism has been found to be very sensitive to the carrier concentration in the substrate which controls the shape of the diffusion profile and accelerates or retards the diffusion process. The variations of the junction depth with substrate doping has been attributed to the equilibrium shift between interacting species rather than to the internal field. From a detailed analysis of the zinc and cadmium diffusion profiles in InP, the presence of neutrals and the interstitial charge state have been identified.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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Cremoux B.
Thomson-csf Laboratoire Central De Recherches
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KAZMIERSKI K.
THOMSON-CSF, Laboratoire Central de Recherches
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Kazmierski K.
Thomson-csf Laboratoire Central De Recherches
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- A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
- Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
- The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
- An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer
- Double Zinc Diffusion Fronts in InP : Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange