An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer

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概要

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• A second diffusion of Zn has been observed in GaAs in the low-concentration range. The behaviour is similar to that of double diffusion in InP. The effect of zinc activity in the vapour phase has been studied using a semiclosed-box system. The observed profiles of Zn have been explained using a model of varying charge transfer by vacancy centers during interstitial-substitutional interchanges.

• 社団法人応用物理学会の論文
• 1987-10-20

著者

• Cremoux B.de.

  Thomson-csf Laboratoire Central De Recherches Domainde Corbeville

• Launay F.

  Thomson-csf Laboratoire Central De Recherches Domainde Corbeville

• Kazmierski K.

  Thomson-csf Laboratoire Central De Recherches Domainde Corbeville

• Kazmierski K.

  Thomson-csf Laboratoire Central De Recherches

関連論文

• A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
• Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
• The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
• An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer
• Double Zinc Diffusion Fronts in InP : Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange

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