Double Zinc Diffusion Fronts in InP : Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange

スポンサーリンク

概要

• 論文の詳細を見る

• Two concurrent models of interstitial-substitutional interchange involving more than one charge transfer are considered. The assumption of charged vacancy centers is shown to give a model consistent with the experimental data.

• 社団法人応用物理学会の論文
• 1985-02-20

著者

• Cremoux B.de

  Thomson-csf Laboratoire Central De Recherches Domaine De Corbeville

• Kazmierski K

  Thomson‐csf Orsay Fra

• Kazmierski K.

  Thomson-csf Laboratoire Central De Recherches

関連論文

• A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
• Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
• The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
• An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer
• Double Zinc Diffusion Fronts in InP : Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange

スポンサーリンク