Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method

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概要

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• Liquid sources consisting of the In-Zn-As ternary system have been successfully used for the diffusion of Zn in GaAs by the semiclosed-box method. The surface concentration and junction depth were easily controlled over a wide range of source composition. The experimentally observed effects of the zinc and arsenic fractions in the source on the diffusion agree well with a model derived from interstitial-substitutional interchange.

• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Cremoux B.

  Thomson-csf Laboratoire Central De Recherches

• KAZMIERSKI K.

  THOMSON-CSF, Laboratoire Central de Recherches

• LAUNAY F.

  THOMSON-CSF, Laboratoire Central de Recherches

• HUBER A.

  THOMSON-CSF, Laboratoire Central de Recherches

• Launay F

  Thomson‐csf Orsay Fra

• Launay F.

  Thomson-csf Laboratoire Central De Recherches Domainde Corbeville

• Kazmierski K.

  Thomson-csf Laboratoire Central De Recherches

• Huber A.

  Thomson-csf Laboratoire Central De Recherches

関連論文

• Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 μm
• A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
• Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
• The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
• An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer
• Double Zinc Diffusion Fronts in InP : Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange

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