Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 μm
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Ricciardi J.
Thomson-csf-domaine De Corbeville-laboratoire Central De Recherches
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Hirtz P.
Thomson-csf-domaine De Corbeville-laboratoire Central De Recherches
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BLONDEAU R.
Thomson-CSF-Domaine de Corbeville-Laboratoire Central de Recherches
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CREMOUX B.
Thomson-CSF-Domaine de Corbeville-Laboratoire Central de Recherches
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Cremoux B.
Thomson-csf Laboratoire Central De Recherches
関連論文
- Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 μm
- A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
- Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
- The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method