The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
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概要
- 論文の詳細を見る
A novel semiclosed diffusion technique for III-V semiconductors has been developped giving ease of control of the operating and junction depth. The secondary-ion mass-spectrometry atom profiles and carrier-concentration profiles have been used to develop a mechanism involving the temperature dependence of neutral Zn formation. Doubly-ionized interstitials are thought to be the diffusion species.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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Cremoux B.
Thomson-csf Laboratoire Central De Recherches
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Cremoux B.
Thomson-csf-laboratoire Central De Recherches
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KAZMIERSKI K.
THOMSON-CSF, Laboratoire Central de Recherches
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Huber A.M.
Thomson-CSF-Laboratoire Central de Recherches
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Morillot G.
Thomson-CSF-Laboratoire Central de Recherches
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Kazmierski K.
Thomson-csf Laboratoire Central De Recherches
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Kazmierski K.
Thomson-csf-laboratoire Central De Recherches:(present Address)the Institute Of Electron Technology
関連論文
- Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 μm
- A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
- Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
- The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
- An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer
- Double Zinc Diffusion Fronts in InP : Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange