Characteristics of High-T_c Nb_3Ge Films Prepared by Chemical Vapor Deposition
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概要
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The properties of Nb-Ge films prepared by chemical vapor deposition have been studied in order to clarify the characteristics of high-T_cNb_3Ge. The effects of the deposition temperature and film composition on the transition temperature, residual resistance ratio, residual resistivity, A15 lattice parameter and growth of the A15 and non-A15 phases are described. The characteristics of the high-T_c phase are discussed in terms of correlations between the transition temperature, A15 lattice parameter and film composition. For films with transition temperatures around 20 K, the A15 lattice parameter is 〜5.140Å, and the film composition (Nb/Ge ratio) falls in the range 2.5-3.0. Micrographs of some films, taken by scanning electron microscopy, reveal that the growth morplnology of films changes markedly as the deposition temperature varies from 750 to 900℃.
- 1984-08-20
著者
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Ouchi Hirobumi
Department Of Electrical Engineering Faculty Of Engineering Tohoku University
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Suzuki Mitsumasa
Department Of Electrical Engineering Faculty Of Engineering Tohoku University
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Anayama Takashi
Department of Electrical Engineering, Faculty of Engineering, Tohoku University
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Anayama T
Hachinohe National Coll. Technology Hachinohe
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Anayama Takeshi
Dept. Of Electrical Engineering Tohoku University
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