Correlation between Structure and Optoelectronic Properties of Undoped Microcrystalline Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-04-15
著者
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HISHIKAWA Yoshihiro
New Materials Research Center, Sanyo Electric Co., Ltd.
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TANAKA Makoto
New Materials Research Center, Sanyo Electric Co., Ltd.
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Hishikawa Yoshihiro
New Materials Research Center Sanyo Electric Co. Ltd.
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SIEBKE Frank
New Materials Research Center, SANYO Electric Co., Ltd.
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YATA Shigeo
New Materials Research Center, SANYO Electric Co., Ltd.
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Yata Shigeo
New Materials Research Center Sanyo Electric Co. Ltd.
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Siebke Frank
New Materials Research Center Sanyo Electric Co. Ltd.:(present Address) Iustitute Of Thin Film And I
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Tanaka Makoto
New Materials Research Center Sanyo Electric Co. Ltd.
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- Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
- Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
- New Interpretation of the Effect of Hydrogen Dilution of Silane on Glow-Discharged Hydrogenated Amorphous Silicon for Stable Solar Cells
- Effect of Heating SiH_4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon ( Plasma Processing)
- High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
- Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
- Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
- Correlation between Structure and Optoelectronic Properties of Undoped Microcrystalline Silicon
- Preparation and Properties of a-SiGe:H Films Fabricated with a Super Chamber (Separated Ultra-High Vacuum Reaction Chamber)
- Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
- Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
- A New Analytical Method of Amorphous Silicon Solar Cells
- Preparation of Poly-Ge Considering its Application to a-Si/Poly-Ge Multilayer Structures by a Low-Temperature Solid Phase Crystallization Method
- Considering the Dependence of the Light-Induced Effect on Carbon Content in Boron-Doped Amorphous Silicon-Carbon