Preparation of Poly-Ge Considering its Application to a-Si/Poly-Ge Multilayer Structures by a Low-Temperature Solid Phase Crystallization Method
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概要
- 論文の詳細を見る
Poly-Ge films with good crystallinity were prepared by a low-temperature solid phase crystallization (SPC) method for application to multilayer a-Si/poly-Ge structures. Using a-Ge:H films prepared at just below the thermal decomposition temperature of GeH4 gas as the starting material for SPC, high-quality poly-Ge with Ge<111> peak orientation was obtained after low-temperature annealing at 350°C for 2 h in a nitrogen atmosphere. Furthermore, the selective crystallization of a-Ge:H sublayers in an a-Si:H( ∼50 Å)/a-Ge:H( ∼1000 Å) multilayer film was achieved by annealing at 350°C. The poly-Ge sublayers included large crystal grains with dimensions of about 3000 Å, which were three times as thick as the poly-Ge sublayers.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-01-15
著者
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Maruyama Eiji
New Materials Research Center Sanyo Electric Co. Ltd.
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Tsuda Shinya
New Materials R. C. Sanyo Electric Co. Ltd.
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Haku Hisao
New Materials Research Center Sanyo Electric Co . Ltd.
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Kiyama Seiichi
New Materials R. C. Sanyo Electric Co. Ltd.
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Tanaka Makoto
New Materials Research Center Sanyo Electric Co. Ltd.
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Haku Hisao
New Materials Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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Tsuda Shinya
New Materials Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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Kiyama Seiichi
New Materials Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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