MgO(200) Highly Oriented Filrns on Si(100) Synthesized by Ambient-Controlled Pulsed KrF Excimer Laser Deposition Method
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概要
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MgO film growth on Si(100) using tne ambient-controlled pulsed KrF excimer laser deposition method has been performed under a wide range of synthesis conditions: oxygen pressure (Po_2) of 10^<-6>-10^<-3> Torr, substrate temperature (T_<sub>) of 100-300℃, and laser irradiation energy density on Mg metal target of 0.6-2.0 J/cm^2. MgO(200) pole figures of MgO films are measured by the X-ray (CuKα) diffraction method using Schulz's reflection attachment. Almost all MgO films have strong (200)-preferred orientation and rather weak (220)-preferred orientation. The crystallographic relation of the former case is MgO(200)//Si(100) and MgO[011]//Si[011]. MgO film with the highest degree of (200)-preferred orientation was fabricated under the optimized conditions of T_<sub>=300℃, energy density=1.5 J/cm^2, and Po_2=1×10^<-4> Torr.
- 社団法人応用物理学会の論文
- 1996-06-15
著者
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HIROSHIMA Yasushi
Applied Laser Engineering Research Institute
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Inoue Tsuyoshi
Department Of Electrical Engineering Nagaoka University Of Technology
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Inoue Tsuyoshi
Department Of Appied Chemistry Faculty Of Engineering Osaka University
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Ishiguro Takashi
Department Of 2nd Physiology Showa University School Of Medicine
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