Diffusion Barrier Effects Against Cu of W -N Layer Formed by Electron Cyclotron Resonance Plasma Nitridation on W Layer

概要

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To improve the diffusion barrier effects of W against Cu, W-N/W multilayers formed by electron cyclotron resonance (ECR) N_2 plasma exposure on W layers were investigated. Cu/W-N/W/Si multilayer structures were measured using secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and electric resistance change. The W-N/W films showed a dramatic improvement in barrier properties over those of metallic W films. When the thickness of the W-N/W barrier layer was only 5 nm, the Cu/W-N/W/Si multilayer retained the multilayer structure even after annealing at 873 K for 1 h in H_2 without increase of resistivity. The thickness of the W-N layer formed by ECR plasma nitridation was less than 1-2 nm, which provided an excellent barrier effect.
社団法人応用物理学会の論文
1995-04-15