Self-Aligned Rapid Thermal Nitridation of TiSi_2 in NH_3 Ambient as a Diffusion Barrier Layer for Selective CVD-Al Contact Plug Formation

概要

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Diffusion barrier properties and selectivity required for selective chemical vapor deposition (CVD)-Al contact plug formation are remarkably improved by the self-aligned rapid thermal nitridation (RTN) of TiSi_2 layer in NH_3 ambient at 865℃ for 30 s. This treatment enables the formation of a nonstoichiometric TiSi_x layer with a low concentration of nitrogen within 10-20 nm below its surface. However, nitridation is thought to occur particularly along the grain boundaries, resulting in high diffusion-barrier integrity against aluminum diffusion through the grain boundaries. In addition, this treatment provides favorable selective growth from the bottom of contact holes by reducing the number of nucleation sites on the inner side of contact holes. Therefore, our newly developed proc-ess is very promising for contact plug formation of complementary metal-oxide-semiconductor (CMOS) using the salicide process.
社団法人応用物理学会の論文
1995-02-28