Coherent Tunneling and Voltage Amplification

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概要

• 論文の詳細を見る

• We analyze the flow of electrons injected continuously into one metal side of a specially biased metal-insulator-metal tunnel junction, where this metal part has a sufficiently long mean free path. These injected electrons are energetic and yield an electric double layer at the end of this metal region on the insulator side. Then, an appreciable amount of voltage difference (some type of emf) appears across both ends of this metal layer. From results of calculations, we discuss the possibility of such a phenomenon.

• 社団法人応用物理学会の論文
• 1991-04-15

著者

• Nagae Moichiro

  Department Of Mathematics And Physics The National Defense Academy

関連論文

• Linear Responses of Metal-Insulator-Metal Tunnel Junctions to Step Input Voltage
• Frequency Response of Metal-Insulator-Metal Tunnel Junctions
• Theory of Recombination Processes in Semiconductors through Multielectron Centers with Many Excited States
• Coherent Tunneling and Voltage Amplification
• Response Time of Metal-Insulator-Metal Tunnel Junctions
• Note on the Response-Time Limit of Metal-Insulator-Metal Tunnel Junctions
• Effect of Excited Multielectron Centers on the Recombination Processes in Semiconductors

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