Linear Responses of Metal-Insulator-Metal Tunnel Junctions to Step Input Voltage
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概要
- 論文の詳細を見る
Time-dependent tunneling currents in response to a step input voltage are numerically calculated by taking into account the scattering decays of tunneling electrons. Detailed characteristics of the rising of the current response at times after switching on are obtained. Relations between the response time and the scattering decay time are investigated, and effects of scattering on the response to changes in the tunneling probabilities are also analysed.
- 社団法人応用物理学会の論文
- 1973-04-05
著者
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Naito Seiichi
Department Of Physics Defense Academy
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NAGAE Moichiro
Department of Physics, Defense Academy
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Nagae Moichiro
Department Of Mathematics And Physics The National Defense Academy
関連論文
- Linear Responses of Metal-Insulator-Metal Tunnel Junctions to Step Input Voltage
- Broken Symmetry and the Stability of Particle-like States
- S-Matrix and Abnormal Solutions of the Bethe-Salpeter Equation
- Spectra of Massless and Zero Energy-Momentum Solutions of the Bethe-Salpeter Equation
- Frequency Response of Metal-Insulator-Metal Tunnel Junctions
- Theory of Recombination Processes in Semiconductors through Multielectron Centers with Many Excited States
- Coherent Tunneling and Voltage Amplification
- Response Time of Metal-Insulator-Metal Tunnel Junctions
- Note on the Response-Time Limit of Metal-Insulator-Metal Tunnel Junctions
- Effect of Excited Multielectron Centers on the Recombination Processes in Semiconductors