Theory of Recombination Processes in Semiconductors through Multielectron Centers with Many Excited States

概要

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Excess carrier lifetimes are calculated under steady state conditions with explicit considerations for transitions between the various states of a multi-charged center. The results obtained are of nearly the same forms as in the usual theory- in so far as a phenomenological treatment is concerned. Apparent capture probabilities of the center can be represented by probabilities of various elementary processes, and correspond to total conductances of a certain equivalent circuit. Basing upon these formulae, some studies of dynamical processes are made, and possibilities of relatively large capture cross section of repulsive centers as well as attractive ones are obtained.
社団法人日本物理学会の論文
1963-02-05