Effect of Excited Multielectron Centers on the Recombination Processes in Semiconductors

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概要

• 論文の詳細を見る
• 一般社団法人日本物理学会の論文
• 1962-10-05

著者

• NAGAE Moichiro

  Department of Physics, Defense Academy

• Nagae Moichiro

  Department Of Mathematics And Physics The National Defense Academy

関連論文

• Linear Responses of Metal-Insulator-Metal Tunnel Junctions to Step Input Voltage
• Frequency Response of Metal-Insulator-Metal Tunnel Junctions
• Theory of Recombination Processes in Semiconductors through Multielectron Centers with Many Excited States
• Coherent Tunneling and Voltage Amplification
• Response Time of Metal-Insulator-Metal Tunnel Junctions
• Note on the Response-Time Limit of Metal-Insulator-Metal Tunnel Junctions
• Effect of Excited Multielectron Centers on the Recombination Processes in Semiconductors

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