Response Time of Metal-Insulator-Metal Tunnel Junctions

概要

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The current response to a step input voltage is calculated on the basis of the assumption that the decay of each elementary current caused by scattering is slow enough. The exponential decay is not assumed. A general expression for the response time τ is obtained in the case of a square potential-barrier model. When the bias voltage V is so small that eV≪Δε, where -e is the electron charge and Δε≡&ℏ{w(2m/W)^<1/2>}^<-1> (w is the barrier thickness, m the electron mass and W the height of the potential barrier above the Fermi energy), τ is approximately given by &ℏ/(2Δε); τ&&sp;1.7×10^<-15>s and Δε&&sp;0.2 eV are obtained when w=20Å and W=4 eV. At large biases eV≫Δε, the current response consists of two parts: one part with the response time of the form &ℏ/(eV)+&ℏ/Δξ (Δξ is w-independent and Δξ≫Δε) and the other part which responds instantaneously to the input voltage.
社団法人応用物理学会の論文
1972-11-05