Perovskite Formation of Pb(Mg_<1/3>Nb_<2/3>)O_3 and Pb(Fe_<1/2>Nb_<1/2>)O_3 Film by Sol-Gel Method
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概要
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Dielectric thin films of Pb(Mg_<1/3>Nb_<2/3>)O_3 and Pb(Fe_<1/2>Nb_<1/2>)O_3 were prepared by sol-gel method. The Pb(Mg_<1/3>Nb_<2/3>)O_3 perovskite film was formed by heat treatment at over 600℃ and oriented on substrates whose interplanar spacings were close to that for the perovskite. On the other hand, Pb(Fe_<1/2>Nb_<1/2>)O_3 perovskite appeared at below 500℃. It was not oriented in spite of having almost the same lattice parameters. Transmission electron microscopy revealed that Pb(Mg_<1/3>Nb_<2/3>)O_3 perovskite nucleation occurs at specific places on the substrate, while Pb(Fe_<1/2>Nb_<1/2>)O_3 occurs randomly in the film. The grain of these films grew larger than 0.1 μm, and the dielectric constant was 1800 for the PMN film.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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Imai M
Univ. Osaka Prefecture Sakai
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Kakuno K
Yokohama National Univ. Yokohama
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Kakuno Keiichi
Department Of Computer Engineering Yokohama National University
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Okuwada K
Toshiba Corp. Yokohama Jpn
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OKUWADA Kumi
R&D Center, Toshiba Corporation
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NAKAMURA Shinichi
R&D Center, Toshiba Corporation
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IMAI Motomasa
R&D Center, Toshiba Corporation
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