Early Stage of High Speed Switching in Magnetic Thin Films
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概要
- 論文の詳細を見る
A new experimental method for studying the early stage of high speed switching is developed on the basis of the following experimental results. (1) The magnetization reversal process caused by short and giant pulse fields relaxes within about 30 nsec. (2) The amount of the irreversibly reversed magnetization, which depends on the each pulse duration, remains without drastic changes beyond this relaxation time. In the present method, method, in contrast with coventional experiments, the amount of the magnetization is measured in more than several seconds after the irreversibly reversed magnetization caused by the short pulse has relaxed. By using this amount as a measure, the early stage of the switching within nanoseconds can be examined with a sufficient time resolution less than 0.1 nese. The present method reveals for the first time an oscillatory change in the magnetization within 1 nsec at the early stage of the switching.
- 社団法人日本物理学会の論文
- 1973-11-05
著者
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Gondo Yasuo
Department Of Electrical Engineering And Research Institute For Material Science And Technology Yoko
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Gondo Yasuo
Department Of Computer Engineering Faculty Of Engineering Yokohama National University
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Kakuno Keiichi
Department Of Computer Engineering Yokohama National University
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Kakuno Keiichi
Department Of Electrical Engineering And Research Institute For Material Science And Technology Yoko
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