Carrier Concentration Dependence on T_c in Bi_2Sr_<2-x>RE_xCaCu_2O_<8+δ> (RE=Nd and Ce)
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概要
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Structure, resistivity and susceptibility have been measured in the Bi_2Sr_<2-x>RE_xCaCu_2O_<8+δ> (RE=Nd and Ce) system. The samples with 0≦x≦1 (RE=Nd) and 0≦x≦0.25 (RE=Ce) have almost single phases of the Bi_2Sr_2CaCu_2O_<8+δ> structure. The x-dependence on T_c in the Ce-substituted system is almost twice as strong as that in the Nd-substituted one. The valences of Nd and Ce ions in the samples were determined from susceptibility measurement as trivalent and tetravalent, respectively. The hole concentration was determined from the Hall effect measurement. The results confirm that the hole concentration in the Ce-substituted system becomes twice as strong as that in the Nd-substittuted one, as expected from the universal relationship between the T_c and the hole concentration in the Bi_2Sr_2CaCu_2O_<8+δ> system.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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NOGUCHI Seiichiro
Department of Applied Physics,Faculty of Engineering,Nagoya University
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Koyama Kuniyuki
Technology Development Center Toyohashi University Of Technology
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Koyama Kuniyuki
Technology Development Center Toyohashi University Of Technology:(present Address) Faculty Of Integr
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TAHATA Norikazu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Tahata Norikazu
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present Addr
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Noguchi Seiichiro
Department Of Applied Physics Faculty Of Engineering Nagoya University
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