A New Evaluation Method of Silicon Wafer Bonding Interfaces and Bondinug Strength by KOH Etching
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概要
- 論文の詳細を見る
KOH anisotropic etching is used to study the interfaces of bonded silicon wafers. This method has been developed to detect the presence of bubbles or unbonded areas with a gap of less than 0.27 μm, which is the detection limit of an IR camera. Because of the anisotropic etching properties of KOH and the presence of interfacial oxide layers, the etching surface morphology is dependent on the crystallographic orientation of the cross section. Correlation of etching results to the bonding strength of silicon wafers with and without a therma11y oxidized silicon layer is also discussed.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Feijoo Diego
School Of Engineering Duke University
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Mitani Kenichiro
Hypermedia Research Center Sanyo Electric Co. Ltd.
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MITANI Kiyoshi
School of Engineering, Duke University
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Mitani K
Sanyo Electric Co. Ltd. Gifu Jpn
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Gosele Ulrich
School Of Engineering Duke University
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CHA Giho
School of Engineering, Duke University
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Cha Giho
School Of Engineering Duke University
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