Development of (Pb,Nb)(Zr,Sn,Ti)O_3 Film Using a Sol-Get Process and Resulting Antiferroelectric Properties
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概要
- 論文の詳細を見る
(Pb,Nb)(Zr,Sn,Ti)O_3 films are developed on Pt-coated Si substrates using a sol-get process and their electronic properties are studied. An excessive amount of Pb in precursor solution is necessary to obtain films with good crystallinity. A 2.4-μm-thick film annealed at 650℃ shows a dielectric constant of about 400 at room temperature. Electric field intensity at the antiferroelectric-to-ferroelectric phase transition is 80 kV/am. Spontaneous polarization is 28 μC/cm^2. Spontaneous polarization in this film is close to that observed in bulk samples (sintered at 1270℃). The electric field intensity, however, is approximately twice that of bulk samples.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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Kimura Shingo
Department Of Physics School Of General Education Iwate Medical University
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Kimura S
Ntt Photonics Lab. Kanagawa Jpn
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Kimura S
Central Research Laboratory Hitachi Ltd.
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Kimura Sachiko
Research And Development Group Ricoh Co. Ltd.
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FUJIMURA Itaru
Research and Development Center, Richo Company Ltd.
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Fujimura Itaru
Research And Development Group Ricoh Co. Ltd.
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AKIYAMA Yoshikazu
Research and Development Group, RICOH Co., Ltd.
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Akiyama Yoshikazu
Research & Development Group Ricoh Co. Ltd.
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