A Comprehensive Study of Thin Rapid Thermal Oxide Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-12-15

著者

• Martinez A

  Lab. D'analyse Et D'architecture Des Systemes(laas/cnrs) Toulouse Fra

• Sarrabayrouse G

  Lab. Analyse Et D'architecture Des Systemes Upr Cnrs 8001 Toulouse Fra

• SARRABAYROUSE Gerard

  LAAS-CNRS

• YAHIA MESSAOUD

  LAAS

• SCHEID Emmanuel

  CNRS.

• CLAVERIE Alain

  CNRS.

• MARTINEZ Augustin

  LAAS

• Claverie A

  Cemes Cnrs Toulouse Fra

• SARRABAYROUSE Gerard

  LAAS

関連論文

• Charged Defects at the Interface between Directly Bonded Silicon Wafers
• A Comprehensive Study of Thin Rapid Thermal Oxide Films
• Positive Charge Increase in Plasma Deposited Oxides Induced by Low Pressure Chemical Vapor Deposition of Silicon Nitride
• Comprehensive Analysis of an Isolation Area Obtained by Local Oxidation of Silicon Without Field Implant
• Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals
• Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

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