Charged Defects at the Interface between Directly Bonded Silicon Wafers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-09-15

著者

• Peyre-lavigne Andre

  Motorola

• LAPORTE Angeline

  LAAS-CNRS

• SARRABAYROUSE Gerard

  LAAS-CNRS

• BENAMARA Mourad

  CEMES-CNRS

• CLAVERIE Alain

  CEMES-CNRS

• ROCHER Andre

  CEMES-CNRS

• Laporte Angeline

  Laas-cnrs:motorola:(present Address) Sgs-thomson Microelectronics

関連論文

• Charged Defects at the Interface between Directly Bonded Silicon Wafers
• A Comprehensive Study of Thin Rapid Thermal Oxide Films
• Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals
• Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

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