Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

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概要

• 論文の詳細を見る

• Characterisation of bonded high-resistivity silicon wafers by the microwave photoconductance decay (μPCD) technique has been performed. Bonding is shown to drastically alter the bulk recombination activity of the wafers. The technique allows to separate between bulk and interface recombination and appears as a powerful tool to evaluate the quality of the bonded interface.

• 社団法人応用物理学会の論文
• 1999-11-15

著者

• SARRABAYROUSE Gerard

  LAAS-CNRS

• BIELLE-DASPET Danielle

  LAAS-CNRS

• Lecerf Pascal

  LAAS-CNRS

関連論文

• Charged Defects at the Interface between Directly Bonded Silicon Wafers
• A Comprehensive Study of Thin Rapid Thermal Oxide Films
• Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si_2H_6 and Annealing
• Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals
• Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

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