Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si_2H_6 and Annealing

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概要

• 論文の詳細を見る

• Polycrystalline silicon films on SiO_2 are formed by Low Pressure Chemical Vapor Deposition from disilane at 450℃ and subsequent annealing at 600℃. Homogeneity performances of the deposition are given, which compares with those of Si deposition from SiH_4. The structure of the polysilicon material obtained after annealing is shown. The resulting grain size is much larger than the one that could be obtained by Si deposition from SiH_4 and annealing. An optical evaluation of the film is given, confirming the potential of Si_2H_6, for the fabrication of high field effect mobility thin film transistors.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• SCHEID Emmanuel

  LAAS-CNRS

• Mauduit Bernadette

  Lmsm-ups

• TAURINES Philippe

  LAAS-CNRS

• BIELLE-DASPET Danielle

  LAAS-CNRS

関連論文

• Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P^+ Metal-Oxide-Semiconductor Transistors Gates : Semiconductors
• Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si_2H_6 and NH_3
• Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si_2H_6 and Annealing
• Semi-Insulating Polycrystalline Silicon by Low Pressure Chemical Vapour Deposition from Disilane and Nitrous Oxide
• Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals
• Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

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