Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P^+ Metal-Oxide-Semiconductor Transistors Gates : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Jalabert Laurent

  Laas-cnrs

• Jalabert L

  Laas Cnrs Toulouse Fra

• MAHAMDI Ramdane

  Department of Electronics, University Mentouri Route d'Ain EL-Bey Constantine

• MANSOUR Farida

  Department of Electronics, University Mentouri Route d'Ain EL-Bey Constantine

• SCHEID Emmanuel

  LAAS-CNRS

• BOYER Pierre

  LAAS-CNRS

• Mahamdi R

  Univ. Mentouri Route D'ain El‐bey Constantine Constantine Dza

• Mansour Farida

  Department Of Electronics University Mentouri Route D'ain El-bey Constantine

• Mahamdi Ramdane

  Department Of Electronics University Mentouri Route D'ain El-bey Constantine

関連論文

• Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P^+ Metal-Oxide-Semiconductor Transistors Gates : Semiconductors
• Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si_2H_6 and NH_3
• Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si_2H_6 and Annealing
• Semi-Insulating Polycrystalline Silicon by Low Pressure Chemical Vapour Deposition from Disilane and Nitrous Oxide
• Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals

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