Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si_2H_6 and NH_3

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-03-01

著者

• SCHEID Emmanuel

  LAAS-CNRS

• BOYER Pierre

  LAAS-CNRS

• Boyer P

  Laas Cnrs Toulouse Fra

• SAMITIER Josep

  LCMM-DFAE, Universitat de Barcelona

• HASSANI Ahmed

  LCMM-DFAE, Universitat de Barcelona

• Hassani Ahmed

  Lcmm-dfae Universitat De Barcelona

• Samitier Josep

  Lcmm-dfae Universitat De Barcelona

関連論文

• Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P^+ Metal-Oxide-Semiconductor Transistors Gates : Semiconductors
• Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si_2H_6 and NH_3
• Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si_2H_6 and Annealing
• Semi-Insulating Polycrystalline Silicon by Low Pressure Chemical Vapour Deposition from Disilane and Nitrous Oxide
• Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals

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