Positive Charge Increase in Plasma Deposited Oxides Induced by Low Pressure Chemical Vapor Deposition of Silicon Nitride

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-01-15

著者

• Sarrabayrouse G

  Lab. Analyse Et D'architecture Des Systemes Upr Cnrs 8001 Toulouse Fra

• Despax Bernard

  Laboratoire De Genie Electrique De Toulouse

• FAY Jean

  Motorola Semiconducteurs S.A., Avenue du General Eisenhower

• BELUCH Jean

  Motorola Semiconducteurs S.A., Avenue du General Eisenhower

• SARRABAYROUSE Gerard

  Laboratorie d'Analyse et d'Architecture des Systemes

関連論文

• A Comprehensive Study of Thin Rapid Thermal Oxide Films
• Positive Charge Increase in Plasma Deposited Oxides Induced by Low Pressure Chemical Vapor Deposition of Silicon Nitride
• Comprehensive Analysis of an Isolation Area Obtained by Local Oxidation of Silicon Without Field Implant
• Positive Charge Increase in Plasma Deposited Oxides Induced by Low Pressure Chemical Vapor Deposition of Silicon Nitride

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