Time Dependence of Cd Diffusion in GaAs from the Gaseous Phase

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-02-05

著者

• YOSHIDA Shigetomo

  Department Electronic Engineering, Faculty of Engineering, Tohoku University

• Toyama Nosho

  Department Of Electronics Faculty Of Engineering Tohoku University

• Yoshida Shigetomo

  Department Electronic Engineering Faculty Of Engineering Tohoku University

関連論文

• Effect of Cd on the Isothermal Decay of F Center in X-Ray Irradiated NaCl
• Diffusion of Cu Ions in Alkali Chlorides
• Production of F Centers by Ultraviolet Irradiation in Sulfur-Doped NaCl Crystal
• Effect of Heat Treatment on the Ionic Conduction and the Optical Absorption in Sulfur-Doped Sodium Chloride
• Temperature Dependence of Capacitance of Silicon P-n Step Junctions
• Temperature Dependence of Depletion-Layer Capacitance of p-n Step Junctions
• Stacking Faults Produced in Si-Doped GaAs during Heat Treatment in As Vapour
• Time Dependence of Cd Diffusion in GaAs from the Gaseous Phase
• Effect of As Vapor Pressure on Etch Pit Density and Junction Depth for Cd Diffused GaAs
• Energy Distribution of Transmitted Secondary Electrons from Porous KCl Films
• Effect of Divalent Cation Impurities on the Formation and Bleaching of Colloids in NaCl
• Injection Mechanism for Transmission Secondary Emission from Porous KCl Films
• Energy Distribution of Transmitted Secondary Electrons from Thin Porous KCl Films

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