Effect of As Vapor Pressure on Etch Pit Density and Junction Depth for Cd Diffused GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-01-05
著者
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YOSHIDA Shigetomo
Department Electronic Engineering, Faculty of Engineering, Tohoku University
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Toyama Nosho
Department Of Electronics Faculty Of Engineering Tohoku University
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Yoshida Shigetomo
Department Electronic Engineering Faculty Of Engineering Tohoku University
関連論文
- Effect of Cd on the Isothermal Decay of F Center in X-Ray Irradiated NaCl
- Diffusion of Cu Ions in Alkali Chlorides
- Production of F Centers by Ultraviolet Irradiation in Sulfur-Doped NaCl Crystal
- Effect of Heat Treatment on the Ionic Conduction and the Optical Absorption in Sulfur-Doped Sodium Chloride
- Temperature Dependence of Capacitance of Silicon P-n Step Junctions
- Temperature Dependence of Depletion-Layer Capacitance of p-n Step Junctions
- Stacking Faults Produced in Si-Doped GaAs during Heat Treatment in As Vapour
- Time Dependence of Cd Diffusion in GaAs from the Gaseous Phase
- Effect of As Vapor Pressure on Etch Pit Density and Junction Depth for Cd Diffused GaAs
- Energy Distribution of Transmitted Secondary Electrons from Porous KCl Films
- Effect of Divalent Cation Impurities on the Formation and Bleaching of Colloids in NaCl
- Injection Mechanism for Transmission Secondary Emission from Porous KCl Films
- Energy Distribution of Transmitted Secondary Electrons from Thin Porous KCl Films