Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes

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概要

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• The decrease of the deterioration-induced second peak height was observed under the presence of a large forward current, not a diffusion current but an excess current, with sweep at audio frequencies at low temperatures. Two independent relaxation processes were found. One of them was a thermal process and had a relaxation frequency with an activation energy of 0.4 eV and an attempt frequency of 10^<13> cps. The second process which was observable only at temperatures below 170°K was not a thermally activated one and had an almost constant relaxation frequency of about 50 cps. The former process was accompanied by hysteresis while the latter was not. The analysis of the processes by the proposed energy model in this study was only partly successful in interpreting the experimental observations.

• 社団法人応用物理学会の論文
• 1965-04-15

著者

• Shibata Akikazu

  Sony Corporation

関連論文

• On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors
• On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium Arsenide
• Deterioration of GaAs Esaki Diodes
• Analysis of a Tunnel Diode
• Deterioration-Induced Slow Trap in GaAs Esaki Diodes
• Distribution Coefficient of Zinc in Gallium Arsenide
• Relaxation in the Deterioration-Induced Second Peak in Gallium Arsenide Esaki Diodes
• Excess and Thermal Currents in Gallium Arsenide Esaki Diodes

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